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NAND08GW4B3AZB1F

NUMONYX

NUMONYX NAND08GW4B3AZB1F
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NAND TYPE
  • Technology
    CMOS
  • Width (mm)
    9.5
  • Length (mm)
    12
  • JESD-30 Code
    R-PBGA-B63
  • Memory Width
    16
  • Package Code
    TFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    512MX16
  • Number of Functions
    1
  • Number of Terminals
    63
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    25000
  • Number of Words Code
    512M
  • Memory Density (bits)
    8589934592
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.2
  • Supply Voltage-Max (V)
    3.6
  • Supply Voltage-Min (V)
    2.7
  • Supply Voltage-Nom (V)
    3
  • Number of Words (words)
    536870912
  • Programming Voltage (V)
    3
  • Supply Current-Max (mA)
    20
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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