NAND08GR3B4CZL6E
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Flash, 1GX8, 30ns, PBGA52
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Page Size2K words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Sector Size128K Words
- Data PollingNO
- Memory Width8
- Organization1GX8
- Package CodeLGA
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory Density8589934592 bit
- Memory IC TypeFLASH
- Access Time-Max30 ns
- Number of Words1073741824 words
- Parallel/SerialPARALLEL
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Supply Current-Max20 mA
- Number of Terminals52
- Standby Current-Max5.0E-5 Amp
- Number of Words Code1G
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size8K
- Package Equivalence CodeLGA52(UNSPEC)
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Nom (Vsup)1.8 V
NAND08GR3B4CZL6E有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
NAND08GR3B4CZL6E