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NAND04GR4B2AN1

Micron Technology

NAND04GR4B2AN1 产品规格书
Micron Technology NAND04GR4B2AN1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NAND TYPE
  • Technology
    CMOS
  • Width (mm)
    12
  • Length (mm)
    18.4
  • JESD-30 Code
    R-PDSO-G48
  • Memory Width
    16
  • Package Code
    TSSOP
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    DUAL
  • Memory Organization
    256MX16
  • Number of Functions
    1
  • Number of Terminals
    48
  • Terminal Pitch (mm)
    0.5
  • Access Time-Max (ns)
    35
  • Number of Words Code
    256M
  • Memory Density (bits)
    4294967296
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.2
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    268435456
  • Programming Voltage (V)
    1.8
  • Supply Current-Max (mA)
    15
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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