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NAND02GW4B2BZB6E

Micron Technology

Micron Technology NAND02GW4B2BZB6E
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NAND TYPE
  • Technology
    CMOS
  • Width (mm)
    9.5
  • Length (mm)
    12
  • JESD-30 Code
    R-PBGA-B63
  • Memory Width
    16
  • Package Code
    TFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN SILVER COPPER
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    128MX16
  • Number of Functions
    1
  • Number of Terminals
    63
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    35
  • Number of Words Code
    128M
  • Memory Density (bits)
    2147483648
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.2
  • Supply Voltage-Max (V)
    3.6
  • Supply Voltage-Min (V)
    2.7
  • Supply Voltage-Nom (V)
    3
  • Number of Words (words)
    134217728
  • Programming Voltage (V)
    3
  • Supply Current-Max (mA)
    30
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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