NAND01GR4B2CZA6F
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Flash, 64MX16, PBGA63
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Width9.5 mm
- Length12 mm
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B63
- Memory Width16
- Organization64MX16
- Package CodeTFBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Words67108864 words
- Parallel/SerialPARALLEL
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Seated Height-Max1.05 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals63
- Programming Voltage1.8 V
- Number of Words Code64M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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NAND01GR4B2CZA6F