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NAND01GR4B2BN6E

NUMONYX

NUMONYX NAND01GR4B2BN6E
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    SLC NAND TYPE
  • Technology
    CMOS
  • Width (mm)
    12
  • Length (mm)
    18.4
  • JESD-30 Code
    R-PDSO-G48
  • Memory Width
    16
  • Package Code
    TSOP1
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE, THIN PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e3/e6
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN/TIN BISMUTH
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    DUAL
  • Memory Organization
    64MX16
  • Number of Functions
    1
  • Number of Terminals
    48
  • Terminal Pitch (mm)
    0.5
  • Access Time-Max (ns)
    25000
  • Number of Words Code
    64M
  • Memory Density (bits)
    1073741824
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.2
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    67108864
  • Programming Voltage (V)
    1.8
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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NAND01GR4B2BN6E