NAND01GR3B2CZA6F
NUMONYX
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明Flash, 128MX8, 25000ns, PBGA63
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Width (mm)9
- Length (mm)11
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Package CodeTFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Page Size (words)2K
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization128MX8
- Number of Functions1
- Number of Terminals63
- Sector Size (words)128K
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)25000
- Number of Words Code128M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size1K
- Seated Height-Max (mm)1.05
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)134217728
- Programming Voltage (V)1.8
- Standby Current-Max (A)5.0E-5
- Supply Current-Max (mA)20
- Package Equivalence CodeBGA63,10X12,32
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NAND01GR3B2CZA6F