NANOAMP SOLUTIONS INC N5DS4M32EG-5 | 搜芯易Sourcengine

NANOAMP SOLUTIONS INC N5DS4M32EG-5

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
DDR1 DRAM, 4MX32, 0.7ns, CMOS, PBGA144
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B144
Memory Width
32
Organization
4MX32
Package Code
FBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
134217728 bit
Memory IC Type
DDR1 DRAM
Refresh Cycles
4096
Terminal Pitch
0.8 mm
Access Time-Max
0.7 ns
Number of Words
4194304 words
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Supply Current-Max
560 mA
Number of Terminals
144
Standby Current-Max
0.015 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8,FP
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA144,12X12,32
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
200 MHz