N2CC2G40GN-CG
Nanya Technology Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR3 DRAM, 512MX4, CMOS, PBGA78
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)8
- Access ModeMULTI BANK PAGE BURST
- Length (mm)10.5
- JESD-30 CodeR-PBGA-B78
- Memory Width4
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH, IT ALSO REQUIRES 1.35V NOMINAL SUPPLY VOLTAGE
- Memory Organization512MX4
- Number of Functions1
- Number of Terminals78
- Terminal Pitch (mm)0.8
- Number of Words Code512M
- Memory Density (bits)2147483648
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)536870912
- Sequential Burst Length4,8
- Standby Current-Max (A)0.012
- Supply Current-Max (mA)225
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA78,9X13,32
- Clock Frequency-Max (MHz)667
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
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N2CC2G40GN-CG