Micron Technology N25Q128A23EF7A0E | 搜芯易Sourcengine

Micron Technology N25Q128A23EF7A0E

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Flash, 16MX8, PDSO8
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Technology
CMOS
Width (mm)
5
Length (mm)
6
JESD-30 Code
R-PDSO-N8
Memory Width
8
Package Code
HVSON
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE Meter
Surface Mount
YES
Terminal Form
NO LEAD
Memory IC Type
FLASH
Operating Mode
SYNCHRONOUS
Parallel/Serial
SERIAL
Serial Bus Type
QSPI
Write Protection
HARDWARE/SOFTWARE
Temperature Grade
AUTOMOTIVE
Terminal Position
DUAL
Memory Organization
16MX8
Number of Functions
1
Number of Terminals
8
Terminal Pitch (mm)
1.27
Number of Words Code
16M
Memory Density (bits)
134217728
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.9
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
16777216
Programming Voltage (V)
3
Package Equivalence Code
SOLCC8,.25
Clock Frequency-Max (MHz)
108
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Endurance (Write/Erase Cycles)
100000
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED