MICROWAVE TECHNOLOGY INC MWT-PH4F | 搜芯易Sourcengine

MICROWAVE TECHNOLOGY INC MWT-PH4F

生命周期状态
Active
RoHS
符合RoHS标准
说明
MED POWER ALGAAS/INGAAS PHEMT
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N4
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY
Number of Terminals
4
Power Gain-Min (Gp)
12 dB
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Highest Frequency Band
KA BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
7.5 V
Operating Temperature-Max
175 Cel
Transistor Element Material
Al/In GALLIUM ARSENIDE