MWT-PH470F
MICROWAVE TECHNOLOGY INC
- 生命周期状态Contact Mfr
- 说明RF Small Signal Field-Effect Transistor, KA Band, Al/in Gallium Arsenide, P-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Additional FeatureHIGH RELIABILITY
- Power Gain-Min (Gp)12 dB
- Polarity/Channel TypeP-CHANNEL
- Highest Frequency BandKA BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min7.5 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialAl/In GALLIUM ARSENIDE
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MWT-PH470F