MICROWAVE TECHNOLOGY INC MWT-PH28F | 搜芯易Sourcengine

MICROWAVE TECHNOLOGY INC MWT-PH28F

生命周期状态
Contact Mfr
说明
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Al/in Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
10.5 dB
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
K BAND
DS Breakdown Voltage-Min
8.5 V
Operating Temperature-Max
175 Cel
Transistor Element Material
Al/In GALLIUM ARSENIDE