MICROWAVE TECHNOLOGY INC MWT-173HG | 搜芯易Sourcengine

MICROWAVE TECHNOLOGY INC MWT-173HG

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
X-CXMW-F4
Configuration
SINGLE
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
9 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
7 V
Operating Temperature-Max
150 Cel
Transistor Element Material
GALLIUM ARSENIDE