IXYS Corporation MWI35-12E7 | 搜芯易Sourcengine

IXYS Corporation MWI35-12E7

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
17
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Collector Current-Max (IC)
52 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V