MWI35-12A5
IXYS Corporation
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-XUFM-P17
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- VCEsat-Max (V)3
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals17
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)190
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)170
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)570
- Collector Current-Max (IC) (A)45
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardUL RECOGNIZED
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MWI35-12A5