MUN5312DW1T1
ONSEMI
- 生命周期状态EOL
- 说明TRANS PREBIAS NPN/PNP SOT363
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN AND PNP
- DC Current Gain-Min (hFE)60
- Power Dissipation-Max (W)0.15
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)235
- Collector Current-Max (IC) (A)0.1
- Collector-emitter Voltage-Max (V)50
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MUN5312DW1T1