ONSEMI MUN5212DW1T1 | 搜芯易Sourcengine

ONSEMI MUN5212DW1T1

生命周期状态
EOL
说明
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
60
Power Dissipation-Max (W)
0.15
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
235
Collector Current-Max (IC) (A)
0.1
Collector-emitter Voltage-Max (V)
50