MTW26N15E
Motorola,Inc.
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 26A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE ENERGY RATED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)150
- Drain Current-Max (ID) (A)26
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)150
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)810
- Pulsed Drain Current-Max (IDM) (A)78
- Drain-source On Resistance-Max (ohm)0.095
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MTW26N15E