Motorola,Inc. MTW20N50E | 搜芯易Sourcengine

Motorola,Inc. MTW20N50E

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247AE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
2000
Pulsed Drain Current-Max (IDM) (A)
60
Drain-source On Resistance-Max (ohm)
0.27