Motorola,Inc. MTP8N15L | 搜芯易Sourcengine

Motorola,Inc. MTP8N15L

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 8A I(D), 150V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE, LEADFORM OPTIONS ARE AVAILABLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
150 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
75 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
75 W
Drain-source On Resistance-Max
0.45 ohm
Pulsed Drain Current-Max (IDM)
20 A