- 生命周期状态Active
- 说明Power Field-Effect Transistor, 4A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4 A
- DS Breakdown Voltage-Min500 V
- Transistor Element MaterialSILICON
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