SEMICONDUCTOR TECHNOLOGY INC MTM3N55 | 搜芯易Sourcengine

SEMICONDUCTOR TECHNOLOGY INC MTM3N55

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-204AA
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3 A
Turn-on Time-Max (ton)
150 ns
Feedback Cap-Max (Crss)
80 pF
DS Breakdown Voltage-Min
550 V
Turn-off Time-Max (toff)
260 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-65 Cel
Power Dissipation-Max (Abs)
75 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
2.5 ohm
Pulsed Drain Current-Max (IDM)
10 A