Motorola,Inc. MTG7N60E | 搜芯易Sourcengine

Motorola,Inc. MTG7N60E

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 7A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-218
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7 A
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
70 W
Drain-source On Resistance-Max
0.5 ohm