Motorola,Inc. MTE30N50E | 搜芯易Sourcengine

Motorola,Inc. MTE30N50E

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PUFM-D4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Drain Current-Max (ID) (A)
30
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
235
DS Breakdown Voltage-Min (V)
500
Feedback Cap-Max (Crss) (pF)
250
Turn-off Time-Max (toff) (ns)
475
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
250
Avalanche Energy Rating (Eas) (mJ)
3000
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.15