Motorola,Inc. MTD8N06ET4 | 搜芯易Sourcengine

Motorola,Inc. MTD8N06ET4

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8 A
DS Breakdown Voltage-Min
60 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.12 ohm