Motorola,Inc. MTD1N50-1 | 搜芯易Sourcengine

Motorola,Inc. MTD1N50-1

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1A I(D), 500V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JEDEC-95 Code
TO-251
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1 A
DS Breakdown Voltage-Min
500 V
Operating Temperature-Max
175 Cel
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
1.75 W
Drain-source On Resistance-Max
8 ohm