MTA4ATF25664HZ-2G3A1
Micron Technology
- 生命周期状态Discontinued
- 说明DDR DRAM Module, 256MX64, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width2.5 mm
- Length68.6 mm
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-XZMA-N256
- Memory Width64
- Organization256MX64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density17179869184 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Number of Words268435456 words
- Seated Height-Max30.15 mm
- Temperature GradeOTHER
- Terminal PositionZIG-ZAG
- Additional FeatureAUTO/SELF REFRESH; WD-MAX
- Number of Functions1
- Number of Terminals256
- Number of Words Code256M
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.26 V
- Supply Voltage-Min (Vsup)1.14 V
- Supply Voltage-Nom (Vsup)1.2 V
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MTA4ATF25664HZ-2G3A1