Micron Technology MT9VDDF3272G-262G3 | 搜芯易Sourcengine

Micron Technology MT9VDDF3272G-262G3

生命周期状态
Active
说明
DDR1 DRAM Module, 32MX72, CMOS, PDMA184
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.71
SB Code
8542.32.00.70

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.175
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-PDMA-N184
Memory Width
72
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR1 DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
32MX72
Number of Functions
1
Number of Terminals
184
Terminal Pitch (mm)
1.27
Number of Words Code
32M
Memory Density (bits)
2415919104
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
28.73
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
33554432
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.036
Supply Current-Max (mA)
3150
Interleaved Burst Length
2,4,8
Package Equivalence Code
DIMM184
Clock Frequency-Max (MHz)
133
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0