Micron Technology MT8VDDT1664HY-335F3 | 搜芯易Sourcengine

Micron Technology MT8VDDT1664HY-335F3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 16MX64, CMOS, PDMA200
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N200
Memory Width
64
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR DRAM MODULE
Refresh Cycles
4096
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
16MX64
Number of Terminals
200
Terminal Pitch (mm)
0.6
Number of Words Code
16M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
2.5
Number of Words (words)
16777216
Standby Current-Max (A)
0.024
Supply Current-Max (mA)
2840
Package Equivalence Code
DIMM200,24
Clock Frequency-Max (MHz)
167
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0