Micron Technology MT8VDDT12864HDG-265XX | 搜芯易Sourcengine

Micron Technology MT8VDDT12864HDG-265XX

生命周期状态
Active-Unconfirmed
说明
DDR DRAM Module, 128MX64, 0.75ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XZMA-N200
Memory Width
64
Organization
128MX64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
8589934592 bit
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Access Time-Max
0.75 ns
Number of Ports
1
Number of Words
134217728 words
Temperature Grade
COMMERCIAL
Terminal Position
ZIG-ZAG
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
200
Number of Words Code
128M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Peak Reflow Temperature (Cel)
235
Time@Peak Reflow Temperature-Max (s)
30