Micron Technology MT8KTF51264AZ-1G9N1 | 搜芯易Sourcengine

Micron Technology MT8KTF51264AZ-1G9N1

生命周期状态
Active
说明
DDR DRAM Module, 512MX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
2.7
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-XDMA-N240
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
240
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
30.5
Supply Voltage-Max (V)
1.45
Supply Voltage-Min (V)
1.283
Supply Voltage-Nom (V)
1.35
Number of Words (words)
536870912
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0