Micron Technology MT8JSF25664HY-80BB1 | 搜芯易Sourcengine

Micron Technology MT8JSF25664HY-80BB1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 256MX64, CMOS, PDMA204
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N204
Memory Width
64
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR DRAM MODULE
Refresh Cycles
8192
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
256MX64
Number of Terminals
204
Terminal Pitch (mm)
0.6
Number of Words Code
256M
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
268435456
Standby Current-Max (A)
0.08
Supply Current-Max (mA)
3200
Package Equivalence Code
DIMM204,24
Clock Frequency-Max (MHz)
400
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0