Micron Technology MT62F512M64D4EK-031FAAT:B | 搜芯易Sourcengine

Micron Technology MT62F512M64D4EK-031FAAT:B

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
LPDDR5 DRAM, 512MX64, CMOS, PBGA441
类别
Semiconductors Memory ICs DRAMs LPDDR5 DRAM

ECCN
EAR99
ECCN Governance
EAR

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Access Mode
MULTI BANK PAGE BURST
Length (mm)
14
JESD-30 Code
S-PBGA-B441
Memory Width
64
Package Code
TFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR5 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
441
Terminal Pitch (mm)
0.65
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.1
Supply Voltage-Max (V)
1.12
Supply Voltage-Min (V)
1.01
Supply Voltage-Nom (V)
1.05
Number of Words (words)
536870912
Sequential Burst Length
16,32
Standby Current-Max (A)
0.0013
Supply Current-Max (mA)
372
Interleaved Burst Length
16,32
Package Equivalence Code
BGA441,21X21,25
Clock Frequency-Max (MHz)
3200
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-40
Screening Level / Reference Standard
AEC-Q100, ASIL-D