Micron Technology MT62F1G64D8DS-031WT:B | 搜芯易Sourcengine

Micron Technology MT62F1G64D8DS-031WT:B

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR5 DRAM, 1GX64, CMOS, PBGA315
类别
Semiconductors Memory ICs DRAMs LPDDR5 DRAM

ECCN
EAR99
ECCN Governance
EAR

I/O Type
COMMON
Technology
CMOS
Width (mm)
12.4
Access Mode
MULTI BANK PAGE BURST
Length (mm)
15
JESD-30 Code
R-PBGA-B315
Memory Width
64
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR5 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
1GX64
Number of Functions
1
Number of Terminals
315
Terminal Pitch (mm)
0.8
Number of Words Code
1G
Memory Density (bits)
68719476736
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.1
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
1073741824
Sequential Burst Length
16,32
Supply Current-Max (mA)
360
Interleaved Burst Length
16,32
Package Equivalence Code
BGA315,15X21,32/28
Clock Frequency-Max (MHz)
3195
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25