Micron Technology MT60B4G4HB-52B:G | 搜芯易Sourcengine

Micron Technology MT60B4G4HB-52B:G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Micron DRAM DDR5 Y32A 16Gb
类别
Semiconductors Memory ICs DRAMs DDR5 DRAM

ECCN
EAR99
ECCN Governance
EAR

I/O Type
COMMON
Technology
CMOS
Width (mm)
9
Access Mode
MULTI BANK PAGE BURST
Length (mm)
11
JESD-30 Code
R-PBGA-B82
Memory Width
4
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR5 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Memory Organization
4GX4
Number of Functions
1
Number of Terminals
82
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
16
Number of Words Code
4G
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
4294967296
Standby Current-Max (A)
0.008
Supply Current-Max (mA)
448
Package Equivalence Code
BGA82,11X13,32
Clock Frequency-Max (MHz)
2604
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0