Micron Technology MT54V2MH18EF-7.5 | 搜芯易Sourcengine

Micron Technology MT54V2MH18EF-7.5

生命周期状态
Discontinued
说明
QDR SRAM, 2MX18, 3ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs QDR SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
15
Length (mm)
17
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
TBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
QDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
2MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
3
Number of Words Code
2M
Memory Density (bits)
37748736
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.6
Supply Voltage-Min (V)
2.4
Supply Voltage-Nom (V)
2.5
Number of Words (words)
2097152
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0