Micron Technology MT53E768M64D4SQ-046AWT:A | 搜芯易Sourcengine

Micron Technology MT53E768M64D4SQ-046AWT:A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR4 DRAM, 768MX64, CMOS, PBGA556
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR

I/O Type
COMMON
Technology
CMOS
Width (mm)
12.4
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12.4
JESD-30 Code
S-PBGA-B556
Memory Width
64
Package Code
VFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)
Terminal Position
BOTTOM
Memory Organization
768MX64
Number of Functions
1
Number of Terminals
556
Terminal Pitch (mm)
0.4
Number of Words Code
768M
Memory Density (bits)
51539607552
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.85
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
805306368
Sequential Burst Length
16,32
Standby Current-Max (A)
0.002
Supply Current-Max (mA)
300
Interleaved Burst Length
16,32
Package Equivalence Code
BGA556,29X29,16
Clock Frequency-Max (MHz)
2133
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25