Micron Technology MT53E768M64D4HJ-046AAT:A | 搜芯易Sourcengine

Micron Technology MT53E768M64D4HJ-046AAT:A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR4 DRAM, 768MX64, 3.5ns, CMOS, PBGA556
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
12.4
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12.4
JESD-30 Code
S-PBGA-B556
Memory Width
64
Package Code
TFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Memory Organization
768MX64
Number of Functions
1
Number of Terminals
556
Terminal Pitch (mm)
0.4
Access Time-Max (ns)
3.5
Number of Words Code
768M
Memory Density (bits)
51539607552
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.1
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
805306368
Sequential Burst Length
16,32
Standby Current-Max (A)
0.0032
Supply Current-Max (mA)
320
Interleaved Burst Length
16,32
Package Equivalence Code
BGA556,29X29,16
Clock Frequency-Max (MHz)
2133
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-40