Micron Technology MT53E512M64D4PM-053AWT:D | 搜芯易Sourcengine

Micron Technology MT53E512M64D4PM-053AWT:D

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR4 DRAM, 512MX64, CMOS, PBGA376
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Access Mode
MULTI BANK PAGE BURST
Length (mm)
14
JESD-30 Code
S-PBGA-B376
Memory Width
64
Package Code
VFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position
BOTTOM
Additional Feature
IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
376
Terminal Pitch (mm)
0.4
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
0.9
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
536870912
Sequential Burst Length
16,32
Standby Current-Max (A)
0.00075
Supply Current-Max (mA)
300
Interleaved Burst Length
16,32
Package Equivalence Code
BGA376,34X34,16
Clock Frequency-Max (MHz)
1866
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25