MT53E512M64D2NZ-046WT:B
Micron Technology
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明LPDDR4 DRAM, 512MX64, 3.5ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)14
- Access ModeMULTI BANK PAGE BURST
- Length (mm)14
- JESD-30 CodeS-PBGA-B376
- Memory Width64
- Package CodeWFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureIT ALSO REQUIRES 1.8V NOMINAL SUPPLY
- Memory Organization512MX64
- Number of Functions1
- Number of Terminals376
- Terminal Pitch (mm)0.4
- Access Time-Max (ns)3.5
- Number of Words Code512M
- Memory Density (bits)34359738368
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)0.71
- Supply Voltage-Max (V)1.17
- Supply Voltage-Min (V)1.06
- Supply Voltage-Nom (V)1.1
- Number of Words (words)536870912
- Sequential Burst Length16,32
- Standby Current-Max (A)0.0024
- Supply Current-Max (mA)300
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA376,34X34,16
- Clock Frequency-Max (MHz)2133
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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MT53E512M64D2NZ-046WT:B