MT53E256M16D1DS-046AIT:B
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明LPDDR4 DRAM, 256MX16, CMOS, PBGA200
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width10 mm
- Length14.5 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B200
- Memory Width16
- Organization256MX16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density4294967296 bit
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words268435456 words
- Screening LevelAEC-Q100
- Seated Height-Max0.8 mm
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals200
- Number of Words Code256M
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length16,32
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA200,12X22,32/25
- Operating Temperature-Max95 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.17 V
- Supply Voltage-Min (Vsup)1.06 V
- Supply Voltage-Nom (Vsup)1.1 V
- Clock Frequency-Max (fCLK)2133 MHz
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MT53E256M16D1DS-046AIT:B