Name: MT53E1G16D1ZW-046AIT:C by Micron Technology
Brand: Micron Technology
SKU: MT53E1G16D1ZW-046AITC-145708614072

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 1Gx16 1.1V/1.8V 200-Pin TFBGA Automotive AEC-Q100
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
MULTI BANK PAGE BURST
Length (mm)
14.5
JESD-30 Code
R-PBGA-B200
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
Memory Organization
1GX16
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.8
Number of Words Code
1G
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.05
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
1073741824
Sequential Burst Length
16,32
Standby Current-Max (A)
0.008
Supply Current-Max (mA)
223
Interleaved Burst Length
16,32
Package Equivalence Code
BGA200,12X22,32/25
Clock Frequency-Max (MHz)
2133
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40
Screening Level / Reference Standard
AEC-Q100, ISO 26262

MT53E1G16D1ZW-046AIT:C

Micron Technology