Micron Technology MT53E128M32D2DS-053AIT:A | 搜芯易Sourcengine

Micron Technology MT53E128M32D2DS-053AIT:A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR4 DRAM, 128MX32, CMOS, PBGA200
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
14.5
JESD-30 Code
R-PBGA-B200
Memory Width
32
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Memory Organization
128MX32
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.65
Number of Words Code
128M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.8
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
134217728
Sequential Burst Length
16,32
Standby Current-Max (A)
0.0012
Standby Voltage-Min (V)
1.06
Supply Current-Max (mA)
260
Interleaved Burst Length
16,32
Package Equivalence Code
BGA200,12X22,32/25
Clock Frequency-Max (MHz)
1866
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Screening Level / Reference Standard
AEC-Q100
Time@Peak Reflow Temperature-Max (s)
30