Micron Technology MT53E128M16D1FW-053AIT:A | 搜芯易Sourcengine

Micron Technology MT53E128M16D1FW-053AIT:A

生命周期状态
Discontinued
REACH
REACH compliant
说明
LPDDR4 DRAM, 128MX16, CMOS, PBGA200
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
14.5
JESD-30 Code
R-PBGA-B200
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Memory Organization
128MX16
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.65
Number of Words Code
128M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.1
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
134217728
Standby Voltage-Min (V)
1.06
Package Equivalence Code
BGA200,12X22,32/25
Clock Frequency-Max (MHz)
1866
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Screening Level / Reference Standard
AEC-Q100
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED