Micron Technology MT53D512M32D2NQ-046AWT:A | 搜芯易Sourcengine

Micron Technology MT53D512M32D2NQ-046AWT:A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR4 DRAM, 512MX32, CMOS, PBGA200
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
14.5
JESD-30 Code
R-PBGA-B200
Memory Width
32
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY
Memory Organization
512MX32
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.95
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
536870912
Sequential Burst Length
16,32
Standby Current-Max (A)
2.0E-6
Supply Current-Max (mA)
360
Interleaved Burst Length
16,32
Package Equivalence Code
BGA200,12X20,32/25
Clock Frequency-Max (MHz)
2133
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25
Time@Peak Reflow Temperature-Max (s)
30