Micron Technology MT53D1024M32D4NP-062WT:A | 搜芯易Sourcengine

Micron Technology MT53D1024M32D4NP-062WT:A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR4 DRAM, 1GX32, CMOS
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
DUAL BANK PAGE BURST
Length (mm)
14.5
Memory Width
32
Self Refresh
YES
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY
Memory Organization
1GX32
Number of Functions
1
Number of Terminals
200
Number of Words Code
1G
Memory Density (bits)
34359738368
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
0.8
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
1073741824
Sequential Burst Length
16,32
Interleaved Burst Length
16,32
Clock Frequency-Max (MHz)
1600
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25
Time@Peak Reflow Temperature-Max (s)
30