Micron Technology MT52L256M32D1PF-107WT:B | 搜芯易Sourcengine

Micron Technology MT52L256M32D1PF-107WT:B

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR3 DRAM, 256MX32, CMOS, PBGA178
类别
Semiconductors Memory ICs DRAMs LPDDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
11
Access Mode
MULTI BANK PAGE BURST
Length (mm)
11.5
JESD-30 Code
R-PBGA-B178
Memory Width
32
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR3 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
Memory Organization
256MX32
Number of Functions
1
Number of Terminals
178
Terminal Pitch (mm)
0.8
Number of Words Code
256M
Memory Density (bits)
8589934592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.85
Supply Voltage-Max (V)
1.3
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
268435456
Sequential Burst Length
8
Standby Current-Max (A)
0.007
Supply Current-Max (mA)
290
Interleaved Burst Length
8
Package Equivalence Code
BGA178,13X17,32
Clock Frequency-Max (MHz)
933
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-30
Time@Peak Reflow Temperature-Max (s)
30