Micron Technology MT4VDDT864HY-335 | 搜芯易Sourcengine

Micron Technology MT4VDDT864HY-335

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 8MX64, 0.75ns, CMOS, PDMA200
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N200
Memory Width
64
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR DRAM MODULE
Refresh Cycles
4096
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
8MX64
Number of Terminals
200
Terminal Pitch (mm)
0.6
Access Time-Max (ns)
0.75
Number of Words Code
8M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
2.5
Number of Words (words)
8388608
Package Equivalence Code
DIMM200,24
Clock Frequency-Max (MHz)
166
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0