MT4LSDT1664AY-10E
Micron Technology
- 生命周期状态NRFND
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Synchronous DRAM Module, 16MX64, 6ns, CMOS, PDMA168
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N168
- Memory Width64
- Organization16MX64
- Package CodeDIMM
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density1073741824 bit
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch1.27 mm
- Access Time-Max6 ns
- Number of Words16777216 words
- Terminal FinishMATTE TIN
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max1080 mA
- Number of Terminals168
- Standby Current-Max0.008 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM168
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)3.3 V
- Clock Frequency-Max (fCLK)125 MHz
- Moisture Sensitivity Level1
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MT4LSDT1664AY-10E